The EPC7C023 is a 5A linear regulator that can be user configured as a standard linear regular or a low-dropout voltage (LDO) linear regulator. This evaluation board utilizes the EPC7019G HEMT as the ...

The ins and outs of Renesas’ new series of 650-V bidirectional GaN switching devices launched at APEC 2026 in San Antonio, ...

Power™ Stage ICs deliver fast fault shutdown, 100% duty-cycle operation, and a single-input PWM option to simplify ...

The collaboration merges ROHM’s device development expertise with TSMC’s advanced GaN-on-silicon technology. Credit: ROHM/Globenewswire. ROHM has entered a strategic partnership with Taiwan ...

DUBLIN--(BUSINESS WIRE)--The "GaN Power Devices - Global Strategic Business Report" has been added to ResearchAndMarkets.com's offering. The global market for GaN Power Devices was estimated at US$346 ...

International Rectifier Corp. has successfully developed a GaN-based (gallium-nitride) power-device technology platform. It’s expected to provide improvements in two key application-specific figures ...

Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, introduced the industry’s first bidirectional switch using depletion-mode (d-mode) GaN technology, capable of ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...

New switch architecture enables single-stage designs, cutting components while boosting efficiency across solar, EV, and AI ...

Wide bandgap semiconductors have taken both power electronics and high frequency circuits by storm, replacing so many applications that were previously dominated by silicon-based devices, e.g., LDMOS ...

Infineon Technologies AG rolled out its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year’s European Microwave Week. As part of Infineon’s ...